EXPERIMENTAL ANALYSIS OF THE TEMPERATURE-DEPENDENT HALL EFFECT USING A MODERNIZED ELECTRONIC SETUP
Ключевые слова:
Hall effect; semiconductor materials; charge carriers; temperature dependence; magnetic field; Hall voltage; four-probe measurement; Schottky contact; microcontroller; Arduino.Аннотация
In this article, the structure and functional capabilities of an experimental setup—designed on the basis of modern microelectronic components and integrated with a personal computer for measuring the Hall effect—are described. The work also outlines the measurement methodology implemented on this system. The primary aim of the study is to investigate the electrophysical properties of semiconductor materials through the Hall effect, in particular to determine the nature of charge carriers, their concentration, and mobility, as well as to analyze how these parameters vary as a function of temperature and magnetic field.
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